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PCl_3/In/H_2的最新工作是揭示PCl_3克分子分数和质量输运效应对外延生长速度和净掺杂影响的互变关系。介绍了用改进了的比早期AsCl_3/Ga/H_2工艺更为适用的技术所进行的高纯磷化铟的汽相外延生长及其控制。叙述了净杂质浓度在10~(13)厘米~(-3)范围和霍尔迁移率超过10~5厘米~2·伏~(-1)·秒~(-1)的高纯外延层的生长。还将讨论用PCl_3克分子分数和质量输运依赖关系控制本底掺杂的方法。指出深施主和浅受主补偿效应的有关数据。讨论故意掺入超过10~(15)～10~(18)范围的浅施主和受主的情况。进行了详细的肖特基势垒测量并与理论相比较。给出金和铝肖特基势垒的内建势关系。指出了77K时的光荧光测量以及它们和外延层纯度的关系。把10~(13)～10~(18)厘米~(-3)范围内净载流子浓度与300K和77K时范德堡霍尔迁移率的关系与理论进行比较。为表示浅施主和受主浓度,根据理论数据对补偿比效应进行了估计。
The latest work of PCl_3 / In / H_2 is to reveal the reciprocal relationship between the effect of PCl_3 mole fraction and mass transport effect on the epitaxial growth rate and net doping. The vapor phase epitaxy of high purity indium phosphide and its control with an improved technique that is more suitable than the earlier AsCl3 / Ga / H2 process are described. The high purity epitaxial layer with net impurity concentration in the range of 10 ~ (13) cm ~ (-3) and Hall mobility of more than 10 ~ 5 cm ~ 2 · V ~ (-1) · s ~ Grow. We will also discuss ways to control background doping with PCl_3 molar fractions and mass transport-dependent relationships. Pointed out that the donor and shallow acceptor compensation effect of the relevant data. Discussed the case of shallow donors and acceptors deliberately incorporated in the range of 10 ~ (15) ~ 10 ~ (18). A detailed Schottky barrier measurement was performed and compared with the theory. The built-in potential relationship between Schottky barrier and gold and aluminum is given. The photofluorescence measurements at 77K and their relationship to the purity of the epitaxial layer are indicated. The relationship between the net carrier concentration in the range of 10 ~ (13) ~ 10 ~ (18) cm ~ (-3) and the van der Waal's mobility at 300K and 77K is compared with the theoretical one. To represent the shallow donor and acceptor concentrations, the compensation effect was estimated based on theoretical data.