论文部分内容阅读
以沟槽负斜坡终端(Trench and Slope Termination,TST)结构为研究对象,分析了该结构提高终端表面耐压的原理,利用TCAD软件对该结构进行电性能仿真研究,注意到击穿机制在不同沟槽深度下有所不同。针对两种击穿机制,进行负斜坡倾角优化;最后,从生产角度对TST终端进行优化,以提高其工艺容差。仿真结果表明,经过优化设计的600VTST终端结构,其宽度为127μm,仅为相同耐压水平的场限环场板复合结构终端的50%。提出的设计方法可广泛应用于高压VDMOS的终端设计。
Taking Trench and Slope Termination (TST) structure as the research object, the principle that the structure improves the terminal surface withstand voltage is analyzed. The TCAD software is used to simulate the electrical performance of the structure. It is noted that the breakdown mechanism is different The depth of the groove is different. For both breakdown mechanisms, negative slope tilt optimization; Finally, from the production point of view of the TST terminal is optimized to improve its process tolerance. The simulation results show that the optimized 600VTST terminal structure has a width of 127μm, which is only 50% of the field terminal with the same voltage level. The proposed design method can be widely used in high-voltage VDMOS terminal design.