论文部分内容阅读
本文对N沟多晶硅栅MOSFET的低温(77 K)阈值特性进行了理论和实验研究.结果表明,理论分析和测试结果一致,而且与器件的室温特性相比,77 K下器件的亚阈值和阈值电压特性以及衬底灵敏度均得到改善.基于这些结果,本文也给出了适于低温工作的增强型MOSFET的设计原则.
In this paper, the theoretical and experimental studies on the low-temperature (77 K) threshold characteristics of N-channel polysilicon gate MOSFETs are carried out. The results show that the theoretical analysis is in good agreement with the test results and the subthreshold and threshold Voltage characteristics and substrate sensitivity are improved.Based on these results, this paper also gives the design principle of an enhancement MOSFET suitable for low temperature operation.