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由离子注入精密制管技术制作的p~+pnn~+硅双漂移雪崩二极管,在毫米波波段可以获得良好的振荡性能,因而作为在此波段上有效的振荡器,广泛地进行了研究。我们对单漂移区硅雪崩二极管已经进行了研究,而且在30千兆赫和50千兆赫波段上,已经获得了较好的结果,二极管制造工艺几乎已能确定。因此,接着进行离子注入p~+pnn~(1+)结构的双漂移雪崩二极管的研究,得到了53千兆赫下,最大输出860毫瓦,最大效率12.6％的良好结果。下面详细地予以叙述。在二极管制造过程中,首先将里德模型的小信号理论推广到双漂移结构中,并把小信号电导和振荡效率近似地联系起来,进行了最佳设计。如果按照该最佳设计,则P层
The p ~ + pnn ~ + silicon dual-drift avalanche diode fabricated by ion implantation precision tube technology can obtain good oscillation performance in the millimeter wave band. Therefore, it has been widely studied as an oscillator effective in this band. We have studied single-drift silicon avalanche diodes and have achieved good results on the 30 GHz and 50 GHz bands, and the diode manufacturing process is almost certain. Therefore, the next study of double-drift avalanche diodes ion-implanted p ~ + pnn ~ (1 +) structure gave good results at 53 GHz with a maximum output of 860 mW and a maximum efficiency of 12.6%. Described below in detail. In the diode manufacturing process, the small signal theory of Reed model is first generalized to double drift structure, and the small signal conductance and oscillation efficiency are approximately related to each other, and the best design is made. If you follow the best design, then p layer