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近年来，由于蓝绿发光二极管和激光二极管的发展，宽禁带ＩＩＩＶ 族氮化物和ＺｎＳｅ 基ＩＩＶＩ族半导体材料成为举世瞩目的研究热点之一。取得这些进展的重要原因是材料质量的不断改善以及创新性的掺杂方法的引入。氧化锌（ＺｎＯ）是具有特殊性质的宽禁带直接带隙ＩＩＶＩ族半导体材料，具有在半导体材料中最高的激子束缚能（６０ｍｅＶ），将是另一种重要的商用光子器件材料。本文将描述高质量氧化锌单晶薄膜的等离子分子束外延生长，重点放在高温ＺｎＯ 受激辐射及激子激光的机理，并在最新的实验发现的基础上，讨论了ＺｎＯ 基材料作为光子材料的应用前景。
In recent years, due to the development of blue-green light-emitting diodes and laser diodes, wide bandgap group III-V nitride and ZnSe group II-VI semiconductor materials have become one of the most notable research topics in the world. Important reasons for these advances are the continuous improvement of material quality and the introduction of innovative doping methods. Zinc oxide (ZnO) is a wide bandgap direct bandgap II-VI semiconductor material with special properties. It has the highest exciton binding energy (60meV) in semiconductor materials and will be another important commercial photonic device material. In this paper, we describe the plasma molecular beam epitaxial growth of high quality zinc oxide single crystal thin films, with emphasis on the mechanism of high-temperature stimulated emission of ZnO and exciton laser. Based on the latest experimental findings, ZnO-based materials are discussed as photonic materials The application prospects.