用Q-t,TVS,C-V和TSIC方法研究了HCl氧化物MOS结构中的钠离子纯化和陷阱能量分布.在含有很干燥的 0-10％ HCl的氧气氛中进行硅的热氧化,温度 1160℃,时间35分钟,然后制成MOS结构.当钠的沾污范围为10~(11)到2.5 ×10~(15)离子/厘米~2时,大于4％的HCl氧化物的钝化效率为 99.5％到 99.99％。在 HCl MOS结构的硅边有两种陷阱态:带电态和中性态,中性态的陷阱能量依赖于HCl的浓度和BTS处理时的温度和电场强度. The sodium ion purification and trap energy distribution in the HCl oxide MOS structure were studied by the Qt, TVS, CV and TSIC methods.The thermal oxidation of silicon was performed in an oxygen atmosphere containing a very dry 0-10% HCl at a temperature of 1160 ° C, 35 minutes, and then made into a MOS structure. The passivation efficiency of more than 4% HCl oxide was 99.5 when the sodium contamination ranged from 10 to (11) to 2.5 × 10 15 ions / cm 2 % To 99.99%. There are two trap states on the silicon side of the HCl MOS structure: charged and neutral states. The trap energy for the neutral states depends on the concentration of HCl and the temperature and electric field strength at the BTS processing.