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一种能实现微波毫米波通信系统收发电略完全单片IC化的新型结构的AlGaAs/GaAs HBT最近由日电公司开发成功,并采用这种器件试制了混合结构的15GHz HBT振荡器,发现它能将相位噪声抑制到GaAs FET构成的15GHz振荡器的1/300以下。这种HBT,只用一块掩模就能实现亚微米的发射极电极、基极电极和集电极电极。通过采用“全自动对准技术”,制造出不同于GaAs FET的独特的纵型超微细结构。这样,
A new type of AlGaAs / GaAs HBT that can realize a little monolithic IC transmission and reception in a microwave millimeter-wave communication system was recently developed by NEC Corporation and a 15 GHz HBT oscillator with a hybrid structure was invented by using this device. It was found that it Phase noise can be suppressed to GaAs FET 15GHz oscillator consisting of less than 1/300. This HBT enables sub-micron emitter, base and collector electrodes with just one mask. Through the use of “fully automatic alignment technology,” to create a different from the GaAs FET unique ultra-fine structure. such,