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The 6-period stacked layers of self-assembled InAs quasi-quantum wires(qQWRs) and quantum dots(QDs) embedded into InAlAs on InP(001) substrates have been prepared by solid molecular beam epitaxy. The structures arecharacterized by atomic force microecopy(AFM) and transmission electron microscopy(TEM). From AFM we have observed for the first time that InAs qQWRs and QDs coexist, and we explained this phenomenon from the view ofthe energy related to the islands. Cross-sectional TEM shows that InAs qQWRs are vertically aligned every otherlayer along the growth direction [001], which disagrees with conventional vertical self-alignment of InAs QDs on GaAssubstrate.