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A separated absorption and multiplication GaN p-i-p-i-n avalanche photo-diode (APD) with a 25 μm diameter mesa is proposed and demonstrated.Compared to the conventional p-i-n APD,the p i-p-i-n structure reduces the probability of premature micro-plasma breakdown,raises the gain from 30 to 400 and reduces the work voltage from 93 to 48 V.The temperature test is set on p-i-p-i-n APDs,and the positive coefficient of 30mV/K shows that avalanche breakdown happens in the devices.The peak responsivity of p i p-i-n APDs is 0.11 A/W under a wavelength of 358 nm.