论文部分内容阅读
,Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors
【机 构】
：
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics,Chine
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2013年11期
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