研究了微波电子回旋共振等离子体化学汽相沉积低温氮化硅薄膜在５—１０６Ｈｚ频率范围内的介电性能．由于低温氮化硅薄膜为具有分形结构的纳米非晶薄膜，致使氮化硅薄膜的介电谱、损耗谱在低频区和高频区具有两种不同的分布规律．在低频区介电谱具有ε′∝ωｎ１－１的关系，ｎ１在０８２—０８８之间，是电子跳跃导电的结果；在高频区介电谱具有ε′∝ωｎ２－１的关系，ｎ２在００５左右，是分形结构导电的结果 The dielectric properties of low temperature silicon nitride films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition in the frequency range of 5-106 Hz were studied. As the low-temperature silicon nitride film is a nano-amorphous film with a fractal structure, the dielectric spectrum and the loss spectrum of the silicon nitride film have two different distribution rules in the low frequency region and the high frequency region. The dielectric spectrum in the low frequency region has the relationship of ε’αωn1-1, n1 between 082-088, which is the result of electron hopping conduction. The dielectric spectrum in high frequency region has ε’αωn2-1 Relationship, n2 at 0  05 or so, is the result of the fractal structure of the conductive