【摘 要】
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In this paper,we report the effect of temperature and carrier concentrations on the structural,electronic and thermoelectric (TE) properties of TAlO2 (T =Cu,Ag
【机 构】
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Department of Physics, Hakim Sabzevari University, Sabzevar 96179-76487, Iran
论文部分内容阅读
In this paper,we report the effect of temperature and carrier concentrations on the structural,electronic and thermoelectric (TE) properties of TAlO2 (T =Cu,Ag and Au) compounds in the bulk and nano-layer structures using full potential-linearized augmented plane wave (FP-LAPW) method combined with Boltzmann transport theory.The results show that the TE properties are controlled by the temperature and carrier concentrations.P-type doping of TAlO2 (T =Cu,Ag and Au) compounds has better TE figure of merit (ZT) than n-type doping.High ZT of 0.984 is achieved for the bulk structure of the AgAlO2 compound,while it is about 1.234 for the nano-layer structure.Hence,among these compounds,the nano-layer of AgAlO2 is a good candidate for TE applications.
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