The crystal structure, phase abundance and the electrochemical properties ofZr(Mn1-xNix)2 (0.40≤x≤0.75) alloys were investigated by means of XRD, Rietveldrefi
Rf sputtering in an Ar discharge of a SiC target has been used to deposit β-SiCfilms on Si-(111) substrates. XRD and infrared absorption spectra measurementswe
Manganese silicide MnSi2-x thin films have been prepared on n-type silicon substratesthrough solid phase reaction. The heterostructures were analyzed by X-ray d