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南京固体器件研究所成功地研制了深槽亚微米栅GaAs MESFET。器件栅工0.4~0.6μm、栅宽150μm、槽深0.3~0.4μm。以1.8×1.8mm标准陶瓷金属微带管壳封装,进一步改善了射频特性。在12GHz下测量,器件噪声系数的最佳值为1.4dB,相关增益7.5dB。大部分器件的噪声系数在1.5~3.5dB范围内。器件在2~12GHz频率范围内的s参数也较好。与日本三菱公司的2SK267和NEC的NE38883 MESFET 进行了同等条件下测试对比,说明测试结果可靠。 用于制作器件的GaAs材料的质量较好。GaAs半绝缘衬底有较高的电阻率;缓冲层纯度较高,提高了与有源层交界面附近的迁移率;有源层为N~+-N层,有利于减小源漏接触电阻。这些为器件获得高增益、低噪声打下了良好的基础。
Nanjing Institute of Solid Devices successfully developed a deep groove sub-micron GaAs MESFET. Device gate work 0.4 ~ 0.6μm, gate width 150μm, groove depth 0.3 ~ 0.4μm. With 1.8 × 1.8mm standard ceramic metal micro-tube package, to further improve the RF characteristics. Measured at 12GHz, the best noise figure for the device is 1.4dB and the associated gain is 7.5dB. The noise figure of most devices is in the range of 1.5 ~ 3.5dB. The s-parameters of the device in the frequency range of 2 ~ 12GHz are also better. Compared with Japan's Mitsubishi 2SK267 and NEC's NE38883 MESFET under the same conditions test comparison, indicating that the test results are reliable. The quality of the GaAs material used to fabricate the device is better. GaAs semi-insulating substrate has a higher resistivity; higher buffer layer purity, increased mobility near the interface with the active layer; active layer is N ~ + -N layer, is conducive to reducing the source-drain contact resistance . These have laid a good foundation for the device to achieve high gain and low noise.