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低温多晶硅薄膜是制备高性能薄膜晶体管的首选材料,由其制成的薄膜晶体管由于在平板显示器件驱动中所展现的优越性能而受到广泛关注。本文系统介绍了低温多晶硅薄膜的三种制备方法—金属诱导横向晶化法、准分子激光晶化法和电感耦合等离子体化学气相沉积法的原理和研究进展,比较了它们之间各自的优缺点,最后对该领域的发展前景进行了展望。
Low-temperature polycrystalline silicon thin films are the first choice for preparing high-performance thin-film transistors. Thin-film transistors made from them have attracted much attention because of their superior performance in driving flat panel display devices. This paper systematically introduces three kinds of preparation methods of low temperature polycrystalline silicon thin films - the principle and research progress of metal induced lateral crystallization, excimer laser crystallization and inductively coupled plasma chemical vapor deposition, compared their respective advantages and disadvantages Finally, the prospects for the development of this area are prospected.