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会上的报告证实,研发的努力已经取得实效,SiGe HBT器件可以在10GHz的频段范围内取代通常使用的GaAs晶体管
The report at the conference confirmed that research and development efforts have been effective. SiGe HBT devices can replace commonly used GaAs transistors in the 10 GHz frequency band.