采用光学相移法 ,对Si基片上Cu膜应力随退火温度的变化进行了研究。研究表明 :随退火温度的升高 ,Cu膜应力减小 ,2 0 0℃时平均应力减小为 - 0 2 6 1× 10 8Pa,且应力分布均匀 ,在选区范围内应力差仅为 2 2 4 4× 10 8Pa。同时用X射线衍射技术测量分析了Cu膜经过不同退火温度热处理后的微结构组织 ,研究了Cu膜的微结构对其应力的影响 Using optical phase shift method, the stress of Cu film on Si substrate with annealing temperature was studied. The results show that with the increase of annealing temperature, the stress of Cu film decreases and the average stress decreases to 0 2 6 1 × 10 8 Pa at 200 ℃, and the stress distribution is uniform. The stress difference in the selected area is only 2 2 4 4 × 10 8 Pa. At the same time, the microstructures of the Cu films after heat treatment at different annealing temperatures were measured and analyzed by X-ray diffraction. The effects of the micro-structure of the Cu films on the stress were studied