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We clarify the effect of the stress in GaN templates on the subsequent AlInGaN deposition by simply growing 150hm AlInGaN on a 30μm GaN template (sample 1) prepared by hydride vapor phase epitaxy and a 2.3μm thin control GaN template (sample 2) prepared by metalorganic chemical vapor deposition.X-ray diffraction and secondary iron mass spectroscopy measurements reveal the stress states (tensile stress and full relaxed for samples 1 and 2,respectively) and compositions (Al0.169In0.01 Ga0.821N,Al0.171In0.006 Ga0.823N for samples 1 and 2,respectively) of AlInGaN.By carefully eliminating other possible factor,as template surface roughness,it is concluded that different stress states of AlInGaN should stem from different stress states of GaN templates.