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采用自主研发系统,应用反应射频磁控技术,在氧化铝陶瓷样片上制备了方阻稳定性好的Ta N薄膜,研究了氮分压(N2/(N2+Ar))、沉积温度、沉积时间对Ta N膜层结构和电性能的影响,通过X射线衍射、四探针方阻仪器测试了薄膜的微结构和方阻值。结果表明:随氮分压的增大,Ta N薄膜的微结构明显变化,同时Ta N薄膜的方阻也有显著增大趋势;随着沉积温度的提高,Ta N薄膜的方阻有减小趋势,当温度达到400℃时,制备出了方阻小于100Ω/□的薄膜;随着沉积时间的加长,Ta N薄膜的方阻也出现减小的现象;最后制备出工艺稳定性好的方阻50Ω/□的Ta N薄膜。
The self-developed system was used to prepare the TaN thin films with good square resistance. The effects of nitrogen partial pressure (N2 / (N2 + Ar)), deposition temperature, deposition time On the structure and electrical properties of Ta N films, the microstructure and square resistance of the films were tested by X-ray diffraction and four-probe square resistance tester. The results show that the microstructure of TaN thin films changes obviously with the increase of nitrogen partial pressure, and the square resistance of TaN thin films also increases significantly. With the increase of deposition temperature, the square resistance of TaN thin films decreases When the temperature reaches 400 ℃, the square resistance is less than 100Ω / □. The square resistance of the TaN thin film decreases with the increase of the deposition time. Finally, a square resistance with good process stability 50 Ω / □ Ta N film.