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本文提出了一种新型的晶闸管器件结构,它是由MOS型和双极型复合构成的MOS栅控横向晶闸管,其输入阻抗高,电压控制,用低压就能控制大功率输出.
In this paper, a novel thyristor device structure is proposed, which is a MOS gate thyristor composed of a MOS type and a bipolar type. The input impedance is high and the voltage is controlled. With low voltage, the high power output can be controlled.