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MOS电阻阵非均匀性校正一直是基于MOS电阻阵的场景产生器研究和发展的关键问题和前沿技术。在对128×128像元MOS电阻阵实验的基础上,分析了其非线性和非均匀性产生的原因,并提出了非均匀性校正算法。首先在MOS电阻阵中覆盖矩阵栅格,建立线性修正表格,然后通过采集校正后数据建立补偿表格,迭代这个修正过程完成校正补偿工作。实验结果表明非均匀性校正算法可行,校正后的红外图像均匀性有较大提高,较好地满足了红外成像制导仿真需求。
MOS resistance array nonuniformity correction has always been the key issue and cutting-edge technology based on research and development of MOS resistance array scene generator. Based on the experiment of 128 × 128 MOS resistance array, the causes of the nonlinearity and inhomogeneity are analyzed, and the nonuniformity correction algorithm is proposed. Firstly, the matrix grid is covered in the MOS resistor array to establish a linear correction table, then the compensation table is established by collecting the corrected data, and the correction process is iterated through the correction process. The experimental results show that the non-uniformity correction algorithm is feasible and the uniformity of the corrected infrared image is greatly improved, which meets the demand of infrared imaging guidance simulation.