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本文报道了 LiNbO_3质子交换光波导 F-P 干涉型电场和电压传感器的结构、制备、工作原理、实验装置与测量结果.用半导体激光器(780nm)作光源,测量了器件对频率在20Hz～1KHz 电场的响应特性,着重测量并得到工频(50Hz)交流电场(幅值为8.3～75V_(zms)/cm)和电压(20～180V_(rms))与调制光输出电压之间的关系曲线.实验研究表明:该器件的线性度为1.4%,电场灵敏度为61.4mV_(rms)/V_(rms)/cm,电压灵敏度为25.6mV_(rms)/V_(rms);且具有结构简单、制作容易、几何尺寸小、光传输插入损耗低等优点;稍加完善,可望制成实用化器件.
In this paper, the structure, fabrication, working principle, experimental setup and measurement results of LiNbO_3 proton exchange optical waveguide FP interferometric electric field and voltage sensor are reported. The semiconductor laser (780nm) is used as the light source to measure the response of the device to the electric field with frequency of 20Hz ~ 1KHz Characteristics, focusing on the measurement and get the relationship between the frequency (50Hz) AC electric field (amplitude of 8.3 ~ 75V zms / cm) and the voltage (20 ~ 180V rms) and modulated light output voltage.Experimental studies have shown The device has a linearity of 1.4%, an electric field sensitivity of 61.4mV rms / V rms / cm and a voltage sensitivity of 25.6mV rms / V rms. The device has the advantages of simple structure, easy fabrication, Small, low insertion loss of optical transmission, etc .; a little more perfect, expected to be made into practical devices.