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本文研究了平面型金属膜电阻器的薄膜淀积速率对电阻器电流噪声的影响。试验中采用了三种镍铬系的电阻材料,用蒸发方法淀积在微晶玻璃基片上。薄膜的厚度在500～800埃之间;蒸发源的温度在1600～2000℃的范围内变化,相应的淀积速率范围为5～200埃/秒;电流噪声的变化从-10分贝到-35分贝。
This paper studies the effect of the film deposition rate of a planar metal film resistor on the resistor current noise. Three kinds of NiCr-based resistive materials were used in the experiment and were deposited on a glass-ceramic substrate by an evaporation method. The thickness of the thin film is between 500 and 800 angstroms; the temperature of the evaporation source varies from 1600 to 2000 ° C with a corresponding deposition rate in the range of 5 to 200 angstroms / second; the current noise changes from -10 decibels to -35 decibel.