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瑞士和意大利科学家在3月30日出版的《科学》杂志上指出,他们在硅上构造单片半导体结构方面取得了重大突破,成功在硅上集成了50微米厚锗,新结构几乎完美无缺,最新研究将让包括X射线技术在内的多个领域受益。来自瑞士联邦理工学院、瑞士电子学与微电子科技中心(CESM)、意大利米兰理工大学以及米兰—比可卡大学的科学家们携手找到了解决办法。在研究中,他们并没有使用连续一层锗,而是用硅和嫁接在其上的单体结构的锗制成
In a March 30 issue of the journal Science, Swiss and Italian scientists noted that they made a major breakthrough in the construction of monolithic semiconductor structures on silicon, succeeded in integrating 50-μm-thick germanium into the silicon, and the new structure was almost perfect, The latest research will benefit a number of areas including X-ray technology. Scientists from the Swiss Federal Institute of Technology, the Swiss Center for Electronics and Microelectronics (CESM), the Polytechnic University of Milan and the University of Milan-Bicca worked together to find a solution. In the study, they did not use a continuous layer of germanium, but made of silicon and germanium with a monolithic structure grafted thereon