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Ph(Mg_(1/3)Nb_(2/3)_(0.380)Ti_(0.360)Zr_(0.260)O_3中的Pb为6％mol的Ba所置换的晶片,比置换量为5％mol的Ba,有更优良的压电性和均匀性,其K_t=0.503,K_p=0.658,N_t=2050KC·mm,tgδ=2.5×10~(-3),ρ=7.8g/cm~3,ε_(33)~T/ε_0=3188,用3％molBa和3％molSr复合置换Pb(Mg_(1/3)Nb_(2/3))_0.380Ti_(0.360)Zr_(0.260)O_3的Pb时仍保持纯Ba置换的良好均匀性和压电性,其K_t=0.504,K_p=0.660,N_t=2060KC·mm,thδ=2.5×10~(-3),ρ=7.8g/cm~3,ε_(33)~T/ε_0=3356.它们良好的压电性和均匀性合乎制作超声实时显像线阵晶片的要求.在线阵晶片中重现这些优良性能的工艺条件是现实的,因而得到实际应用.
The Pb replaced by 6% mol Pb in Ph (Mg 1/3 Nb 2/3/3. (0.380) Ti 0.360 Zr 0.260 O 3 was smaller than the Ba , Which has better piezoelectric property and uniformity. K_t = 0.503, K_p = 0.658, N_t = 2050KC · mm, tgδ = 2.5 × 10-3, p = 7.8g / ) ~ T / ε_0 = 3188, pure Pb was still obtained when Pb (Mg_ (1/3) Nb_ (2/3)) _0.380Ti_ (0.360) Zr_ (0.260) O_3 was substituted by 3% molBa and 3% Ba substitutions have good uniformity and piezoelectricity, K_t = 0.504, K_p = 0.660, N_t = 2060 KC · mm, thδ = 2.5 × 10 -3, ρ = 7.8 g / cm 3, ~ T / ε_0 = 3356. Their good piezoelectricity and uniformity are in line with the requirements of making ultrasonic real-time imaging linear wafers.The practical application of the process conditions for reclaiming these excellent properties in linear wafers is realistic.