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CCD(电荷耦合器件)于贝尔实验室问世的时候,当时认为它的一个优点就是制造工艺简单。因为CCD在原理上不需要进行源、漏扩散,只需要进行场氧化层与金属布线的两次光刻,而普通MOS工艺则至少要进行四次光刻,相比之下,工序就大大减少了。在初期的简单一层栅表面沟道CCD(SCCD,见图1(a))结构中,注入少数载流子(例如采用光激发注入),经过转移后在MOS电容器上取出输出信号,工作原理也很简单。然而,随着特性与制造工艺的不断改进,结构与制造工艺都变得复杂起来了,原先所谓的“CCD制造工艺简单”的说法,现在已经不再适用了。
CCD (Charge Coupled Device) When Bell Laboratories was introduced, one of its advantages at the time was that the manufacturing process was simple. Because the CCD does not require source and drain diffusion in principle, only two lithographs of the field oxide layer and the metal wiring need to be performed. In contrast, the conventional MOS process requires at least four photolithography processes. In contrast, the process is greatly reduced It’s In the early stage of a simple gate-surface channel CCD (SCCD, see Figure 1 (a)) structure, minority carriers were injected (for example using photoexcited injection) and the output signal was removed from the MOS capacitor after transfer. It is also very simple. However, with the continuous improvement of the characteristics and the manufacturing process, both the structure and the manufacturing process have become complicated. The so-called “simple CCD manufacturing process” is no longer applicable.