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等离子体浸没离子注入 (PIII)消除了传统束线离子注入 (IBII)固有的视线限制 ,是一种更适合于处理复杂形状工件的手段 .近十年来 ,PIII及其工业应用在国内外得到了迅速发展 .然而 ,随着PIII的研究与开发的深入 ,发现仍有若干重要的物理与技术问题 ,诸如浅的注入层、离子注入不均匀性、气体 (氮 )等离子体的有限应用范围等等 ,阻碍了PIII工业应用的发展 .目前 ,这些问题已成为国内外学者关注的焦点 .我实验室近年来在注入过程鞘层动力学的计算机理论模拟、离子注入剂量不均匀性改善、圆筒内表面注入研究、新型长射程阴极弧金属等离子体源研制、气体及金属等离子体的综合性表面改性工艺研究、以及低能高温PIII新工艺研究等方面进行了研究工作 .
Plasma immersion ion implantation (PIII) eliminates the inherent line-of-sight limitations of conventional beamline ion implantation (IBII) and is a more suitable tool for handling complex shape workpieces. PIII and its industrial applications have been available at home and abroad for nearly a decade However, with the further research and development of PIII, there are still some important physical and technical problems discovered, such as shallow injection layer, ion implantation inhomogeneity, limited application scope of gas (nitrogen) plasma and so on , Hindering the development of PIII industrial applications.At present, these issues have become the focus of scholars at home and abroad.In my laboratory in recent years, the computer simulation of the sheath kinetics model simulation, ion implantation dose uniformity improvement, within the cylinder Surface injection studies, the development of new long-range cathode arc plasma sources, the comprehensive surface modification of gases and metal plasmas, and the research of low-temperature and high-temperature PIII new technologies.