论文部分内容阅读
本文报道了用于制造超高过集成电路的０．１μｍ栅长ＩｎＰ基ＨＥＭＴ器件技术。该技术主要包括非合金欧姆接触和具有高重复性和均匀性的Ｔ型栅技术。作为该技术应用于集成电路的例子，本文描述了一个噪声系数为２，６ｄＢ的５０ＧＨｚ低噪声放大器和一个增益为９ｄＢ，带宽为６０ＧＨｚ的分布基带放大器。本文还讨论了挖槽终止层的使用以进一步提高挖槽的重复性。
This paper reports a 0.1μm gate-length InP-based HEMT device technology for manufacturing ultra-high integrated circuits. The technology mainly includes non-alloy ohmic contacts and T-type gate technology with high repeatability and uniformity. As an example of the application of this technology to integrated circuits, this paper describes a 50GHz LNA with a noise figure of 2,6dB and a distributed baseband amplifier with a gain of 9dB and a bandwidth of 60GHz. This article also discusses the use of trenching stop layers to further enhance trench repeatability.