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利用汽压控制直拉（ＶＣＺ）法，成功地生长了ＩｎＰ和ＧａＡｓ单晶，其位错密度十分低，比液封直拉法生长的单晶要小一个数量级。ＶＰＥＧａＡｓ衬底的剩余应力是ＬＥＣ衬底的１／４。当分子束外延生长时，产生的滑移位错在ＶＣＺ衬底上得到明显改善。在Ｓ掺杂的ＶＰＲＩｎＰ晶体上没有滑移位错。在这种衬底上生长的ＶＰＥＩｎＧａＡｓ外延层显示出几乎没有传播位错，而且漏电流极小。
The vapor pressure controlled direct pull (VCZ) method successfully grown InP and GaAs single crystal, the dislocation density is very low, compared with liquid crystal Czochralski growth of single crystal is an order of magnitude smaller. The residual stress of the VPEGaAs substrate is ¼ of that of the LEC substrate. As molecular beam epitaxy grows, the slip dislocations produced on the VCZ substrate are significantly improved. There is no slip dislocation on S-doped VPRInP crystals. The VPEInGaAs epitaxial layer grown on such a substrate shows almost no propagation dislocations and the leakage current is extremely small.