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简叙了本征ＧａＡｓ晶体中的光吸收过程，分析了半导体材料光吸收特性与温度之间的依赖关系。研究表明，一定厚度的ＧａＡｓ晶片对入射光的吸收直接依赖于光源的功率谱特性与温度，文中揭示了光吸收—温度曲线与光源光谱功率分布之间的关系式。根据这种原理，获得了新的检测温度的方法，同时，给出了相应的实验结果
The light absorption process in intrinsic GaAs crystals is briefly described, and the dependence of the light absorption characteristics on the temperature of the semiconductor material is analyzed. The research shows that the absorption of incident light by a certain thickness of GaAs wafer directly depends on the power spectrum characteristics and temperature of the light source. The relationship between the light absorption - temperature curve and the light source spectral power distribution is revealed. According to this principle, a new method of temperature detection was obtained. At the same time, the corresponding experimental results