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设计并实现了一款宽带低噪声放大器,采用单级负反馈拓扑结构以提高增益平坦度和稳定性。为进一步简化应用,电路采用电阻自偏压技术实现单电源供电。此外,为优化增益及噪声系数,从低噪声放大器设计理论出发,利用遗传算法对无源元件取值进行了优化。该放大器采用0.25μm PHEMT GaAs工艺实现,芯片面积为1 mm×1.2 mm。测试结果表明,采用5 V单电源电压供电,总工作电流为30 m A,在30~3 000 MHz频率范围内,该放大器增益大于13 d B,噪声系数小于2.1 d B,输入反射系数小于-8.5 d B,输出反射系数小于-10 d B,1 d B压缩点输出功率大于7 d Bm。
A wideband low noise amplifier is designed and implemented using a single stage negative feedback topology to improve gain flatness and stability. To further simplify the application, the circuit uses a resistor self-bias technology to achieve a single power supply. In addition, in order to optimize the gain and noise figure, based on the design theory of LNA, the value of passive components is optimized by genetic algorithm. The amplifier uses 0.25μm PHEMT GaAs process to achieve the chip area of 1mm × 1.2mm. The test results show that with a single 5 V supply, the total operating current is 30 mA and the amplifier gain is greater than 13 dB in the frequency range of 30-3 000 MHz with a noise figure of less than 2.1 dB. The input reflection coefficient is less than - 8.5 d B, the output reflection coefficient is less than -10 d B, 1 d B Compression point output power is greater than 7 d Bm.