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为了了解RTV涂膜在电解质液膜下的半导体转变规律,采用电位-电容法结合Mott-Schottky分析技术研究了室温硫化(RTV)涂膜在质量分数为5%的硫酸钠溶液中的导电行为。研究发现,RTV涂膜表现为极弱的p型半导体特征,电子受体密度NA约为1019m-3。随着浸泡时间的延长,RTV涂膜的导电行为从初期的p型半导体转变为绝缘体,RTV涂膜的空间电荷层电容CSC变化不大。随着测试频率的增加,RTV涂膜的CSC则逐渐减小。这一现象对RTV涂料的应用有一定指导意义。
In order to know the semiconductor transition rule of RTV coating under the electrolyte liquid membrane, the conductance behavior of RTV coating film in 5% sodium sulfate solution was studied by potential-capacitance method and Mott-Schottky analysis technique. The results showed that the RTV coating showed a very weak p-type semiconductor with electron acceptor density of about 1019m-3. With the extension of immersion time, the conductivity of RTV coating changed from the initial p-type semiconductor to insulator, and the space charge capacitance (CSC) of RTV coating did not change much. With the increase of test frequency, the CSC of RTV coating decreased gradually. This phenomenon has some guiding significance for the application of RTV coating.