论文部分内容阅读
室温下首先采用 16 0keVHe离子注入单晶Si样品到剂量 5× 10 16 ions/cm2 ,部分样品再接受80keVSi离子辐照到较高的剂量 5× 10 15ions/cm2 或接受高密度H等离子体处理 .应用透射电镜观测分析了 80 0℃高温退火引起的空腔的形成形貌 .结果表明 ,附加Si离子辐照或H等离子体处理会影响Si中空腔的生长 .就Si离子附加辐照而言 ,由于辐照引入富余的间隙子型缺陷 ,因此 ,它会抑制空腔的生长 ,而高密度H等离子体处理则有助于空腔的生长 .定性地讨论了实验结果 .
At room temperature, single-crystal Si samples were first implanted with a dose of 5 × 10 16 ions / cm 2 at 16 keVHe and some samples were irradiated with 80 keVSi ions to a higher dose of 5 × 10 15 ions / cm 2 or subjected to high-density H plasma treatment. The morphology of the cavity induced by high temperature annealing at 80 ℃ was observed by transmission electron microscope.The results show that the addition of Si ion irradiation or H plasma treatment will affect the growth of Si hollow cavity.For the additional irradiation of Si ion, Due to the introduction of redundant interstitial defects by irradiation, it inhibits the growth of the cavity, whereas the high-density H plasma treatment contributes to the growth of the cavity. The experimental results are qualitatively discussed.