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IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment,in which a sintered oxide IZO target(doped with 10% ZnO,packing density of 99.99%) was used.The effects of total sputtering pressure and film thickness on IZO films properties were studied.All the films produced at room temperature have a amorphous structure,irrespective of the total sputtering pressure and film thickness.A resistivity of the order of 10-4 Ωcm was obtained for IZO films deposited at lower pressure(film thickness of 190 nm).The resistivity of IZO films deposited at room temperature depends on film thickness and shows a minimum at a thickness of 530 nm.
IZO films were deposited onto PET substrate at room temperature with the inclined opposite target type DC magnetron sputtering equipment, in which a sintered oxide IZO target (doped with 10% ZnO, packing density of 99.99%) was used. The effects of total sputtering pressure and the film thickness on IZO films was studied. All the films produced at room temperature have an amorphous structure, irrespective of the total sputtering pressure and film thickness. A resistivity of the order of 10-4 Ωcm was obtained for IZO films deposited at lower pressure (film thickness of 190 nm). The resistivity of IZO films deposited at room temperature depends on the film thickness and shows a minimum at a thickness of 530 nm.