一、引言 由于半导体器件抗核加固研究工作的需要,应用计算机模拟分析半导体器件的辐照效应不仅能节约大量资金,而且能缩短抗核加固研究工作的周期,因此,它已成为抗核加固研究工作的一个重要方面。本文应用电路分析程序模拟CMOS电路的瞬时辐照效应,并和实验结果进行了比较。 I. INTRODUCTION Due to the need of research on the anti-nuclear reinforcement of semiconductor devices, the application of computer simulation to analyze the radiation effects of semiconductor devices can not only save a lot of money, but also shorten the period of anti-nuclear reinforcement research work. Therefore, An important aspect of work. In this paper, the circuit analysis program is used to simulate the instantaneous radiation effects of CMOS circuits and compared with the experimental results.