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通过反应离子刻蚀(RIE)系统地研究了射频功率、压强和气体流量对4H-Si C刻蚀的影响,并进一步研究了刻蚀损伤对金属场板结构4H-Si C肖特基势垒二极管电学性能的影响。研究表明,刻蚀速率和Si C表面形貌都会受到RF功率、压强和刻蚀气体(SF6和O2)流量的影响。在高的RF功率下,观察到在Si C表面形成的刻蚀损伤(凹陷坑和锥形坑)。研究表明,这些刻蚀损伤的形成和Si C材料自身的缺陷有关,而且这些刻蚀损伤的存在会导致Si C肖特基二极管正反向I-V性能发生恶化。在刻蚀损伤严重的情况下,对比正反向I-V测试结果发现,在0~50 V的绝对电压范围内,正向电流甚至远小于反向电流。
The influence of RF power, pressure and gas flow rate on 4H-Si C etching was studied systematically by reactive ion etching (RIE). The effects of etching damage on the 4H-Si C Schottky barrier of metal field plate structure Influence of diode electrical performance. Studies have shown that etch rates and SiC surface topography are affected by RF power, pressure, and flow of etching gases (SF6 and O2). At high RF power, etch damage (dimples and conical pits) formed on the Si C surface was observed. Studies have shown that the formation of these etch damage is related to the defects of the Si C material itself, and the presence of these etch damages can cause deterioration of the positive and negative I-V properties of the Si C Schottky diode. In the case of severe etch damage, comparing positive and negative I-V test results found that in the absolute voltage range of 0 ~ 50 V, the forward current is even much smaller than the reverse current.