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在Al2O3陶瓷基片上以Mo（CO）6为源采用低压冷壁式设备和金属有机气相沉积（MOCVD）方法制备Mo2C薄膜，探讨了该薄膜结构受温度、压力和沉积速率等工艺因素影响的关系．
The Mo2C thin film was prepared on low pressure cold wall and metal organic vapor deposition (MOCVD) on the Al2O3 ceramic substrate using Mo (CO) 6 as the source, and the relationship between the structure and the temperature, pressure and deposition rate was discussed .