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建立了调制激光诱发硅晶圆少数载流子密度波一维模型,仿真分析了少数载流子输运参数对调制激光诱发载流子辐射信号频域响应的影响.利用调制激光诱发载流子辐射扫描成像系统对含有表面划痕的硅晶圆进行了扫描成像试验研究.通过少数载流子密度波模型与多参数拟合方法反求得到了扫描区域的输运参数二维分布图.该方法得到的少数载流子寿命与利用传统光电导方法测量的少数载流子寿命结果相符;分析了划痕对载流子输运参数造成的影响,与光电导方法比较,该方法可以测量不同位置的全部载流子输运参数且分辨率高.
A one-dimensional model of modulating laser-induced silicon minority carrier density wave was established, and the influence of minority carrier transport parameters on the frequency response of modulated laser-induced carrier radiation signal was simulated.The modulation laser-induced charge carrier Scanning imaging experiments on silicon wafers with surface scratches were carried out by the radiation scanning imaging system.The two-dimensional distribution of transport parameters in the scanning area was obtained by inverse minority carrier density wave model and multi-parameter fitting method. The minority carrier lifetime obtained by this method is consistent with the minority carrier lifetime measured by the traditional photoconductive method. The influence of scratches on the carrier transport parameters is analyzed. Compared with the photoconductive method, this method can measure Full carrier transport parameters at different positions with high resolution.