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简单阐述了PECVDSi_3N_4/SiO_2复合膜的钝化机理。介质电容高温准静态离子电流测试、125℃高温时NPN管漏电流I_CeO测试、正向eb结、反向eb结、齐纳结温度系数测试、芯片抗钠离子沾污试验及芯片钝化前后电参数定点测试五种实验取得了比较满意的结果,证实了PECVDSi_3N_4/SiO_2复合膜的钝化作用。最后对PECVD淀积介质膜的生长规律与均匀性做了初步探讨。
The passivation mechanism of PECVDSi_3N_4 / SiO_2 composite membrane is briefly described. Medium capacitance high temperature Quasi-static ion current test, 125N high temperature NPN tube leakage current I_CeO test, positive eb junction, reverse eb junction, Zener junction temperature coefficient test, the chip anti-sodium ion contamination test and chip passivation before and after the power The results of five experiments on the fixed-point parameter testing show that the passivation of PECVDSi_3N_4 / SiO_2 composite membrane is confirmed. Finally, the growth law and uniformity of PECVD deposited dielectric film were discussed.