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Si衬底上外延GaAs材料是微电子学研究的重要课题之一,本文介绍了以大直径的GaAs/Si材料取代GaAs衬底的工艺技术,对Ge元素在GaAs/Si集成电路中的分布影响进行了俄联电子能谱分析研究,并确定了该技术在大规模集成电路中的应用价值。
The epitaxial GaAs material on Si substrate is one of the most important topics in microelectronics research. This paper introduces the technology of replacing GaAs substrate with large diameter GaAs / Si material and the effect of Ge on the distribution of GaAs / Si ICs Conducted a Russian electronic spectrum analysis, and determine the value of the technology in large-scale integrated circuits.