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绝缘栅双极晶体管(insulated gate bipolar transistor,IGBT)是功率模块作为电力电子领域中的重要大功率器件,在大容量场合越来越受重视。高压大功率IGBT模块国产化需求迫切,针对国产IGBT器件的模型研究成为不可缺少的环节。提出一种IGBT模块建模方法,基于IGBT工艺仿真与物理机制建立IGBT芯片模型,利用Q3D软件提取IGBT模块杂散参数,在Saber软件中结合芯片模型与杂散参数建立IGBT模块模型。然后,采用IGBT模块模型在Saber软件中搭建双脉冲仿真电路,得到IGBT模块的仿真波形。最后进行实验研究,将仿真波形与实验波形进行对比,结果基本一致,可见利用该方法所建的IGBT模块模型比较精确,为IGBT器件的应用仿真研究奠定了基础。
Insulated gate bipolar transistor (IGBT) is a power module as an important high-power device in the field of power electronics, which is gaining more and more attention in large-capacity applications. Domestic demand for high-voltage high-power IGBT module is urgent, and research on the model of domestic IGBT device has become an indispensable link. A IGBT module modeling method is proposed. IGBT chip model is established based on IGBT process simulation and physical mechanism. Q3D software is used to extract IGBT module stray parameters. In the Saber software, the IGBT module model is built by combining the chip model with the stray parameters. Then, IGBT module model is used to build double pulse simulation circuit in Saber software to get the simulation waveform of IGBT module. Finally, the experimental study, the simulation waveform and experimental waveform comparison, the results are basically the same, shows that the use of the method of IGBT module model built more accurate, for the application of IGBT device simulation laid the foundation.