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从亚微米进入到1/4μm 时代,VLSI 工艺中的平坦化技术与其它的微细加工技术一起被广泛采用。然而,该技术已作为一种独特的关键技术被人们日益重视起来。那就是平坦化技术对于器件的高密度、微细化是太重要了,可以说,它是决定器件尺寸能否按比例缩小的关键技术。特别是器件结构经三维化后,电极布线随着多层结构的增长,其重要性日益显著。目前,“global planarization”一词已成为工艺技术整体中的关键词。另外,平坦化技术是一种成膜技术与干腐蚀技术组合在一起的复合技术,包括最近十分引人注目的 CMP(化学机械抛光:chemicaland mechanicla polishing)法在内,即使在装置方面也是极其重要的领域。
From sub-micron to the 1 / 4μm era, VLSI process of planarization technology and other micro-processing technology is widely used. However, this technology has been increasingly emphasized as a unique key technology. That is the flattening of the device for high-density, micronization is too important, it can be said that it is to determine the size of the device can be scaled down the key technologies. In particular, the three-dimensional structure of the device, the electrode wiring with the growth of multi-layer structure, the importance of increasingly significant. At present, the word “global planarization” has become the key word in the whole process technology. In addition, the planarization technique is a composite technique in which a film formation technique and a dry etching technique are combined together, including the most highly noticeable CMP (chemical mechanical polishing) method, which is extremely important even in terms of devices field.