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Using a linear graded Inx Ga1- x As as the buffer layer, positive-intrinsic-negative wavelength-extended In0.6Ga0.4As photodetectors with 50% cut-off wavelength of 1.9μm at room temperature were grown by using gas-source molecular beam epitaxy, and their performance over a wide temperature range has been extensively investigated. The detectors show typical dark current at bias voltage 50mV and the resistance-area product RO A of 7nA/765Ωcm2 and 31pA/404kΩcm2 at 290K and 210K, respectively. The thermal activation energy of the dark current in the temperature range 250-350 K is 0.488 eV.