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1.前言很早人们就已知道可以把一个MOS场效管(MOSFET)用作霍尔器件。最近,人们研制出一种称为MAGFET的对漏MOS场效应管用于磁场的测量。然而,在能够把一个能实用的仪器与一个MAGFET联在一起使用之前,还存在一些问题有待解决。对于一个MAGFET来说,是否存在某种理想的几何图形?都有些什么可能的方法来改进这种传感器的性能?传感特性和温度的关系怎样?可以利用VLSI(超大规模集成电路)工艺来获得较高的灵敏度吗? 本文给出了在不同的几何形状下n沟MAGFET的一些实验结果。在较宽的温度范围内对传感参数的特性进行了测量。本文还给出了一种新的互联多个MAGFET的方
1. Introduction It’s long ago known that a MOS FET can be used as a Hall device. Recently, people have developed a kind of leakage MOSFET called MAGFET for magnetic field measurement. However, there are some issues that need to be resolved before being able to put together a practical instrument with a MAGFET. Is there any ideal geometry for a MAGFET? Are there any possible ways to improve the performance of this sensor? What is the relationship between the sensing characteristics and the temperature? The VLSI (Very Large Scale Integration) process can be used to obtain Higher sensitivity? This paper presents some experimental results of n-channel MAGFETs under different geometries. The characteristics of the sensing parameters were measured over a wide temperature range. This paper also presents a new way to interconnect multiple MAGFETs