研究了制备硅纳米结构的方法,与之前的方法相比,本研究中的AgSi纳米颗粒能控制形成硅纳米结构的直径和深度,同时不需要光刻、反应离子刻蚀等高成本的复杂工艺。实验结果表明,将制备的硅纳米结构作为晶硅电池的绒面,在300～1000nm的波长范围内获得了低达5%的反射率;电池的表面复合与电极接触需要改进。 Compared with the previous methods, the AgSi nanoparticles in this study can control the diameter and depth of the silicon nanostructures and do not require complicated processes such as photolithography and reactive ion etching . The experimental results show that the prepared silicon nanostructures as the suede of the crystalline silicon cell can obtain the reflectance as low as 5% in the wavelength range of 300-1000 nm; the surface recombination of the cell and the contact of the electrodes need to be improved.