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大功率半导体器件是机电一体化不可缺少的基础元件，光致诱蚀无显影气相ＤＦＶＰ光刻具有分辨率高、针孔密度低、光刻流程短、设备简单、经济上节约等优点。因此将ＤＦＶＰ运用于晶闸管器件的生产具有重要的意义。研究的技术关键是要解决厚ＳｉＯ＿２层的刻蚀、刻蚀的曝光量及速度问题。本课题对ＤＦＶＰ机理作了进一步研究，从而研究了两种新的光致诱蚀剂；已大大缩短曝光时间（约１分钟），并能刻蚀含杂质镓且厚达１．４μｍ的ＳｉＯ＿２层；对腐蚀设备进行了大的改进，使其能适应生产的需要。
High-power semiconductor devices are indispensable basic elements of mechatronic. Photofacitive non-developed gas phase DFVP lithography has the advantages of high resolution, low pinhole density, short photolithography process, simple equipment and economical economy. Therefore, the application of DFVP in thyristor device production is of great significance. The key technology of the research is to solve the problem of the exposure and the speed of the etching of the thick SiO 2 layer and the etching. The subject of DFVP mechanism was further studied to study the two new photoresist; has greatly reduced the exposure time (about 1 minute), and can be etched with impurities Ga and up to 1.4μm thickness of the SiO_2 layer Great improvements have been made to the corrosion equipment to make it suitable for production.