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使用3D器件模拟了SEU加固单元的多节点翻转(multiple node upset ,MNU)问题.结果表明瞬时悬空节点和电荷横向扩散是MNU的关键原因.对比了MNU和不同存储单元之间的MBU(multiple bit upset) ,发现它们之间的特点存在较大差异.最后讨论了避免MNU的方法.
The 3D device is used to simulate the problem of multiple node upset (MNU) in SEU hardened cells. The results show that transient dangling nodes and lateral charge spreading are the key reasons of MNU. Comparing the difference between MNU and multiple memory cells (MBU) upset, and found that there is a big difference between the characteristics of them.Finally, the method of avoiding MNU is discussed.