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The kesterite-structured semiconductor Cu_2 Zn Sn(S,Se)_4(CZTSSe) is prepared by spin coating a non-hydrazine precursor and annealing at Se atmosphere. Local electrical and optoelectronic properties of the CZTSSe thin-film are explored by Kelvin probe force microscopy and conductive atomic force microscopy. Before and after irradiation, no marked potential bending and very low current flow are observed at GBs, suggesting that GBs behave as a charge recombination site and an obstacle for charge transport. Furthermore, Cd S nano-islands are synthesized via successive ionic layer adsorption and reaction(SILAR) method on the surface of CZTSSe. By comparing the work function and current flow change of CZTSSe and Cd S in dark and under illumination, we demonstrate photo-induced electrons and holes are separated at the interface of p-n junction and transferred in Cd S and CZTSSe, respectively.
The kesterite-structured semiconductor Cu_2 Zn Sn (S, Se) _4 (CZTSSe) is prepared by spin coating a non-hydrazine precursor and annealing at Se atmosphere. Local electrical and optoelectronic properties of the CZTSSe thin-film are explored by Kelvin probe force microscopy and conductive atomic force microscopy. Before and after irradiation, no marked potential bending and very low current flow are observed at GBs, suggesting that GBs behave as a charge recombination site and an obstacle for charge transport. Furthermore, Cd S nano-islands are synthesized via following ionic layer adsorption and reaction (SILAR) method on the surface of CZTSSe. By comparing the work function and current flow change of CZTSSe and Cd S in dark and under illumination, we demonstrate photo-induced electrons and holes are separated at the interface of pn junction and transferred in Cd S and CZTSSe, respectively.