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研究了热退火对InGaN/GaN多量子阱LED的Ni/Au p GaN欧姆接触的影响。发现在空气和N2气氛中交替地进行热退火的过程中Ni/Au接触特性显示出可逆现象。Ni/Au p GaN接触的串联电阻在空气中随合金化时间逐渐减小,在随后的N2中的热退火后会使该串联电阻增加,但在空气中再次热退火能使接触特性得到恢复。同时对Ni/Au p GaN接触在空气中合金化过程中的层反转的成因进行了讨论。
The effect of thermal annealing on the Ni / Au p GaN Ohmic contact of InGaN / GaN MQW LED was investigated. The Ni / Au contact characteristics were found to show reversible phenomena during thermal annealing alternately in air and N 2 atmosphere. The series resistance of the Ni / Au p GaN contact decreases gradually with alloying time in air and increases after the thermal anneal in N2, but the contact resistance is restored by reheating in air. The cause of layer reversal during the alloying of Ni / Au p GaN contacts in air is also discussed.