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随着半导体器件向更高频率和超大规模集成电路发展,器件的尺寸越来越小,图形越来越复杂,集成电路的特征尺寸是否能够进一步减小,与光刻技术的进一步发展密切相关。因此不断提高光刻工艺水平,优化光刻过程中的各种过程参数就愈发显得重要了,其中又主要表现在对光刻工艺线宽的控制。为了更好的实现硅片光刻过程在线宽精度方面的控制,本文主要从三个方面对0.3um线宽制成的光刻工艺的一系列参数进行了优化.首先通过swing curve试验选择了合适的光刻胶厚度,接着通过FEM矩阵确定了光刻机较合适的曝光时间和焦深,最后重点阐述用正交试验对显影、曝光及前烘和PEB在具体步骤当中一些主要参数对于制备结果所造成的影响进行了分析,从中得到了它们的较优的参数组合及影响程度的规律。最终得出当胶厚约为1.03μm时,显影时间为48s;曝光能量为39毫焦(mj);显影温度为23℃。此时光刻后的图形线宽具有最小的偏差,即平均线宽小于0.3+/-5%μm。
With the development of semiconductor devices to higher-frequency and very large-scale integrated circuits, the size of the devices is becoming smaller and smaller, the complexity of the graphics is increased, and the feature size of the integrated circuit can be further reduced, which is closely related to the further development of lithography. Therefore, it is more and more important to continuously improve the lithography process and to optimize the various process parameters in the lithography process. In the process, the control of the line width of the lithography process is mainly manifested. In order to better control the on-line precision of the wafer lithography process, this paper optimizes a series of parameters of the lithography process of 0.3um line width from three aspects.Firstly, through the swing curve test, we choose the appropriate Of the photoresist thickness, followed by the FEM matrix to determine the appropriate exposure time and depth of focus of the lithography machine, and finally highlight the use of orthogonal experiments on the development, exposure and prebaking and PEB in the specific steps of some of the main parameters for the preparation of the results The impact of the analysis has been carried out, from which they get the optimal combination of parameters and the impact of the law. The results show that when the glue thickness is about 1.03μm, the development time is 48s, the exposure energy is 39mJ and the development temperature is 23 ℃. In this case, the pattern line width after lithography has the smallest deviation, that is, the average line width is less than 0.3 +/- 5% μm.